El Dr. Fabián Ambriz estudió la licenciatura en Ciencia en Ingeniería de los materiales en el Instituto Politécnico Nacional. Posteriormente realizó la maestría en Ciencias de los materiales, en la misma institución. Fue acreedor de una beca por parte del gobierno de Quebec para realizar el doctorado en Ciencias de la Energía y los Materiales en el Institut National de la Recherche Scientifique, Varennes-Canada. Una vez culminado su doctorado, realizó dos años de estancia postdoctoral en el Centro de Investigación de Plasma de la Universidad de Concordia (Montreal, Canadá). Desde junio es Investigador en el área de Almacenamiento de Energía del CIO y es miembro del Sistema Nacional de Investigadores, Nivel I.
Líneas de Investigación:
- Fabricación de dispositivos electrónicos
- Estudios de mecanismos de crecimiento de películas delgadas
- Fabricación de sistemas de almacenamiento de energía
- Fabricación de sistemas de cosecha de energía eléctrica
- Técnicas de crecimiento de películas delgadas
Líneas de Investigación:
- Fabrication and Characterization of Electronic Devices. Cede (CIO)
Publicaciones 2022-2015
2022
- Hediyeh Khatibnezhad, Fabian Ambriz-Vargas, Fadhel Ben Ettouil Christian Moreau. “Role of phase content on the photocatalytic performance of TiO2 coatings deposited by suspension plasma spray” Journal of the European Ceramic Society Volume 42, Issue 6, June 2022, Pages 2905-2920. https://doi.org/10.1016/j.jeurceramsoc.2022.02.010
2021
- Hediyeh Khatibnezhad, Fabian Ambriz-Vargas, Fadhel Ben Ettouil Christian Moreau. An investigation on the photocatalytic activity of sub-stoichiometric TiO2-x coatings produced by suspension plasma spray Journal of the European Ceramic Society Volume 41, Issue 1, January 2021, Pages 544-556. https://doi.org/10.1016/j.jeurceramsoc.2020.08.017
2020
- [1] Control of strong-field ionization in ferroelectric lithium niobate: Role of the spontaneous polarization; Physical Review B; Accepted (2020).
2019
- [2] BiFe1-xCrxO3 Ferroelectric Tunnel Junctions for Neuromorphic Systems; ACS Applied Electronic Materials; 30 (3), 2763-2771 (2019).
- [3] Oxygen Vacancy Filament-Based Resistive Switching in HfZrO2 Thin Films for Non-Volatile Memory; Advanced Materials Letters; 10 (6), 405-409 (2019).
2018
- [4] Point Defect Chemistry of Donor-doped Bismuth Titanate Ceramic; Journal of Materials Science: Materials in Electronics; 10.1007/s10854-018-0552-5 (2018).
- [5] Impact of Negative Oxygen Ions on the Deposition Processes of RF-magnetron Sputtered SrTiO3 Thin Films; Thin Solid Films; 661, 23-31 (2018).
- [6] Thermionic Emission Based Resistive Memory with Ultra-Thin Ferroelectric BiFe(1-x)CrxO3 Films Deposited by Mineralizer-Free Microwave-Assisted Hydrothermal Synthesis; ACS-Crystal Growth & Design; 10.1021/acs.cgd.7b01745 (2018).
2017
- [7] A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction; ACS Applied Materials & Interfaces, 9 (15), 13262–13268 (2017).
- [8] Tunneling Electroresistance Effect in a Pt/Hf0.5Zr0.5O2/Pt Structure; Applied Physics Letters, 110, 093106 (2017).
- [9] RF-magnetron Sputtering Deposition of Ultra-thin Hf0.5Zr0.5O2 Films for Non-volatile Memory Applications; Materials today: NN16; 4 (7), 7000-7010 (2017).
- [10] Point-defect Chemistry on the Polarization Behavior of Niobium Doped Bismuth Titanate; Journal of the Mexican Chemical Society; 61, 317-325 (2017).
- [11] Microwave-assisted Hydrothermal Synthesis of BiFexCr1-xO3 Ferroelectric Thin Films; Crystal Growth & Design, 17 (11), 5697-5703 (2017).
2016
- [12] Nucleation and Growth of Ultrathin BaTiO3 Films on Single Terminated Nb:SrTiO3 (100) Substrates for Ferroelectric Tunnel Junction; Journal of Vacuum Science & Technology B, 34, 02M101 (2016).
- [13] Polarization Reversal in BaTiO3 Nanostructures Synthesized by Microwave-assisted Hydrothermal Method; Journal of Alloys and Compounds, 667, 268-274 (2016).
- [14] Synthesis of BiFeO3 Thin Films on Single-terminated Nb:SrTiO3 (111) Substrates by Intermittent Microwave Assisted Hydrothermal Method; American Institute of Physics, Advances, 6 (6), 10.1063 (2016).
- [15] Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors; Nanoscale Research Letters, 11(481), 1-7 (2016).
2015
- [16] On-axis radio Frequency Magnetron Sputtering of Stoichiometric BaTiO3 Target: Localized Re-sputtering and Substrate Etching During Thin Film Growth; Thin Solid Films, 596, 77-82 (2015).
- [17] Surface Preparation of (110) Oriented Pure and Nb Doped SrTiO3 Single Crystal Substrates by Microwave Assisted Hydrothermal Method; Surface & Coatings Technology, 283, 108-114 (2015).
Patentes:
Title: Ferroelectric tunnel junction and a method of fabrication thereof. (US 10,056,394 B1(2018)); Place: Estados unidos de América y Canada; Inventors: Fabian Ambriz-Vargas, Thomas Reji, Rafik Nouar, Andranik Sarkissian, Marc Gauthier, Andreas Ruediger.
Book Chapters:
[1] Ferroelectric (Hf,Zr)O2 Thin Films for High Density Non-volatile Memories?; Frontiers in Materials Processing, Applications, Research and Technology; ISBN 978-981-10-4819-7 (2018).
